Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
- Authors: Ageeva N.N.1, Bronevoi I.L.1, Zabegaev D.N.1, Krivonosov A.N.1
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Issue: Vol 51, No 5 (2017)
- Pages: 565-570
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199828
- DOI: https://doi.org/10.1134/S1063782617050025
- ID: 199828
Cite item
Abstract
The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.
About the authors
N. N. Ageeva
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Russian Federation, Moscow, 125009
I. L. Bronevoi
Kotel’nikov Institute of Radio Engineering and Electronics
Author for correspondence.
Email: bil@cplire.ru
Russian Federation, Moscow, 125009
D. N. Zabegaev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Russian Federation, Moscow, 125009
A. N. Krivonosov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Russian Federation, Moscow, 125009