Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz
- Authors: Khabibullin R.A.1, Shchavruk N.V.1, Ponomarev D.S.1, Ushakov D.V.2, Afonenko A.A.2, Vasil’evskii I.S.3, Zaycev A.A.4, Danilov A.I.5, Volkov O.Y.6, Pavlovskiy V.V.6, Maremyanin K.V.7, Gavrilenko V.I.7
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Affiliations:
- Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
- Belarusian State University
- National Research Nuclear University MEPhI
- National Research University of Electronic Technology MIET
- AO Polyus Research Institute of M.F. Stelmakh
- Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Issue: Vol 52, No 11 (2018)
- Pages: 1380-1385
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204252
- DOI: https://doi.org/10.1134/S1063782618110118
- ID: 204252
Cite item
Abstract
The active region of a THz (terahertz) quantum-cascade laser based on three tunnel-coupled GaAs/Al0.15Ga0.85As quantum wells with a resonance-phonon depopulation scheme is designed. Energy levels, matrix elements of dipole transitions, and gain spectra are calculated as functions of the applied electric-field strength F and temperature. It is shown that the maximum gain is implemented at a frequency of 3.37 THz and F = 12.3 kV/cm. Based on the proposed design, a quantum-cascade laser emitting at ~3.3 THz with a double metal waveguide and Tmax ~ 84 K is fabricated. The activation energy Ea = 23 meV for longitudinal-optical (LO) phonon emission upon the stimulated recombination of hot electrons from the upper laser level to the lower one is determined from the Arrhenius temperature dependence of the output power.
About the authors
R. A. Khabibullin
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
Author for correspondence.
Email: khabibullin@isvch.ru
Russian Federation, Moscow, 117105
N. V. Shchavruk
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
Russian Federation, Moscow, 117105
D. S. Ponomarev
Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
Russian Federation, Moscow, 117105
D. V. Ushakov
Belarusian State University
Email: khabibullin@isvch.ru
Belarus, Minsk, 220030
A. A. Afonenko
Belarusian State University
Email: khabibullin@isvch.ru
Belarus, Minsk, 220030
I. S. Vasil’evskii
National Research Nuclear University MEPhI
Email: khabibullin@isvch.ru
Russian Federation, Moscow, 115409
A. A. Zaycev
National Research University of Electronic Technology MIET
Email: khabibullin@isvch.ru
Russian Federation, ZelenogradMoscow, 124498
A. I. Danilov
AO Polyus Research Institute of M.F. Stelmakh
Email: khabibullin@isvch.ru
Russian Federation, Moscow, 117342
O. Yu. Volkov
Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
Russian Federation, Moscow, 125009
V. V. Pavlovskiy
Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Email: khabibullin@isvch.ru
Russian Federation, Moscow, 125009
K. V. Maremyanin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: khabibullin@isvch.ru
Russian Federation, Nizhny Novgorod, 603950
V. I. Gavrilenko
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: khabibullin@isvch.ru
Russian Federation, Nizhny Novgorod, 603950