Email this article Measurement of the Charge-Carrier Mobility in Gallium Arsenide Using a Near-Field Microwave Microscope by the Microwave-Magnetoresistance Method
- Authors: Usanov D.A.1, Postelga A.E.1, Kalyamin A.A.1, Sharov I.V.1
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Affiliations:
- National Research Saratov State University named after N.G. Chernyshevsky
- Issue: Vol 52, No 13 (2018)
- Pages: 1669-1671
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204851
- DOI: https://doi.org/10.1134/S1063782618130195
- ID: 204851
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Abstract
The possibility of contactless nondestructive local measurements of the microwave carrier mobility in gallium arsenide using a near-field scanning microwave microscope and the effect of microwave magnetoresistance is shown. The need to consider the effect of a shift of the microwave field in processing the result of the measurements is noted.
About the authors
D. A. Usanov
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Russian Federation, Saratov, 410012
A. E. Postelga
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Russian Federation, Saratov, 410012
A. A. Kalyamin
National Research Saratov State University named after N.G. Chernyshevsky
Author for correspondence.
Email: alexey-gtp@mail.ru
Russian Federation, Saratov, 410012
I. V. Sharov
National Research Saratov State University named after N.G. Chernyshevsky
Email: alexey-gtp@mail.ru
Russian Federation, Saratov, 410012
