Email this article Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects
- Authors: Kozlovski V.V.1, Lebedev A.A.2,3, Davydovskaya K.S.2, Lyubimova Y.V.4
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin)
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- Issue: Vol 52, No 12 (2018)
- Pages: 1635-1637
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204825
- DOI: https://doi.org/10.1134/S1063782618120138
- ID: 204825
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Abstract
JBS diodes based on 4H-SiC irradiated with electrons and protons are studied. This is carried out by using the methods of capacitance–voltage and current–voltage characteristics. It is concluded that, for both kinds of irradiation, deep centers are formed in the upper half of the band gap of silicon carbide. This leads to a sharp decrease in the concentration of ionized carriers in the conduction band and to an exponential increase in the resistance of the base regions of the structures under study.
About the authors
V. V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. A. Lebedev
Ioffe Institute; St. Petersburg State Electrotechnical University LETI named after V.I. Ulianov (Lenin)
Author for correspondence.
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
K. S. Davydovskaya
Ioffe Institute
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. V. Lyubimova
St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: Shura.Lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 197101
