Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots


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Abstract

The capping of an array of self-assembled InAs/GaAs quantum dots by an InGaAs quantum-well layer leads to an increase in their size due to indium enrichment of the region near the top of the quantum dots, which decreases the energy of the ground-state optical transition in quantum dots by 50 meV and shifts the hole wave function toward the top of the quantum dot.

About the authors

A. P. Gorshkov

Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950

N. S. Volkova

Physicotechnical Research Institute; Research Institute for Chemistry

Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950; pr. Gagarina 23/5, Nizhny Novgorod, 603950

P. G. Voronin

Lobachevsky State University of Nizhny Novgorod

Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950

A. V. Zdoroveyshchev

Physicotechnical Research Institute

Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950

L. A. Istomin

Research Institute for Chemistry

Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23/5, Nizhny Novgorod, 603950

D. A. Pavlov

Lobachevsky State University of Nizhny Novgorod

Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950

Yu. V. Usov

Lobachevsky State University of Nizhny Novgorod

Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950

S. B. Levichev

Physicotechnical Research Institute

Email: gorshkovap@mail.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950


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