Dielectric properties of layered FeGaInS4 single crystals in an alternating electric field

Abstract

The results of investigations of the frequency and temperature dependences of dielectric losses and the imaginary part of the dielectric permittivity in FeGaInS₄ single crystals are presented. Their experimental values are determined. It is established that the loss tangent and the imaginary part of the permittivity of FeGaInS₄ single crystals in a field with frequencies of 10⁴–10⁶ Hz decrease inversely proportional to the frequency (tanδ ~ 1/ω), and the conductivity is characterized by the band–hopping mechanism. For FeGaInS₄, the relaxation time is calculated, and it is established that there is a mechanism of electron polarization caused by thermal motion in this crystal.