Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures
- Authors: Spirin K.E.1, Gaponova D.M.1, Marem’yanin K.V.1, Rumyantsev V.V.1, Gavrilenko V.I.1, Mikhailov N.N.2, Dvoretsky S.A.2
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Affiliations:
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 52, No 12 (2018)
- Pages: 1586-1589
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204768
- DOI: https://doi.org/10.1134/S1063782618120230
- ID: 204768
Cite item
Abstract
The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.
About the authors
K. E. Spirin
Institute for Physics of Microstructures, Russian Academy of Sciences
Author for correspondence.
Email: spirink@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
D. M. Gaponova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: spirink@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
K. V. Marem’yanin
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: spirink@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
V. V. Rumyantsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: spirink@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
V. I. Gavrilenko
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: spirink@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: spirink@ipmras.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: spirink@ipmras.ru
Russian Federation, Novosibirsk, 630090