Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE
- Authors: Jmerik V.N.1, Shubina T.V.1, Nechaev D.V.1, Semenov A.N.1, Kirilenko D.A.1, Davydov V.Y.1, Smirnov A.N.1, Eliseev I.A.1, Posina G.2, Ivanov S.V.1
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Affiliations:
- Ioffe Institute
- Department of Physics, Chemistry and Biology (IFM)
- Issue: Vol 52, No 5 (2018)
- Pages: 667-670
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203353
- DOI: https://doi.org/10.1134/S1063782618050123
- ID: 203353
Cite item
Abstract
We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.
About the authors
V. N. Jmerik
Ioffe Institute
Author for correspondence.
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
T. V. Shubina
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. V. Nechaev
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Semenov
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. A. Kirilenko
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. Yu. Davydov
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. N. Smirnov
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. A. Eliseev
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. Posina
Department of Physics, Chemistry and Biology (IFM)
Email: jmerik@pls.ioffe.ru
Sweden, Linköping, S-581 83
S. V. Ivanov
Ioffe Institute
Email: jmerik@pls.ioffe.ru
Russian Federation, St. Petersburg, 194021