Email this article MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates
- Authors: Reznik R.R.1,2,3,4, Kotlyar K.P.1, Soshnikov I.P.1,3, Kukushkin S.A.5, Osipov A.V.5, Cirlin G.E.1,2,3,4
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Affiliations:
- St. Petersburg Academic University Russian Academy of Sciences
- ITMO University
- Institute for Analytical Instrumentation Russian Academy of Sciences
- Peter the Great Polytechnic University
- Institute of Problems of Mechanical Engineering Russian Academy of Science
- Issue: Vol 52, No 5 (2018)
- Pages: 651-653
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203292
- DOI: https://doi.org/10.1134/S1063782618050251
- ID: 203292
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Abstract
The possibility of InAs nanowires MBE growth on silicon (111) substrates with a nanometer buffer layer of silicon carbide has been demonstrated for the first time. The NWs diameter turned out to be smaller than on the silicon substrate—the minimum of NWs diameter was less than 10 nm. In addition, dependence of structural properties of InGaAs nanowires on composition was studied.
About the authors
R. R. Reznik
St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University
Author for correspondence.
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251
K. P. Kotlyar
St. Petersburg Academic University Russian Academy of Sciences
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021
I. P. Soshnikov
St. Petersburg Academic University Russian Academy of Sciences; Institute for Analytical Instrumentation Russian Academy of Sciences
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103
S. A. Kukushkin
Institute of Problems of Mechanical Engineering Russian Academy of Science
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 199178
A. V. Osipov
Institute of Problems of Mechanical Engineering Russian Academy of Science
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 199178
G. E. Cirlin
St. Petersburg Academic University Russian Academy of Sciences; ITMO University; Institute for Analytical Instrumentation Russian Academy of Sciences; Peter the Great Polytechnic University
Email: moment92@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 190103; St. Petersburg, 195251
