Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology
- Authors: Seredin P.V.1, Goloshchapov D.L.1, Zolotukhin D.S.1, Lenshin A.S.1, Lukin A.N.1, Mizerov A.M.2, Nikitina E.V.2, Arsentyev I.N.3, Leiste H.4, Rinke M.4
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Affiliations:
- Voronezh State University
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Ioffe Institute
- Karlsruhe Nano Micro Facility
- Issue: Vol 53, No 1 (2019)
- Pages: 65-71
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205588
- DOI: https://doi.org/10.1134/S1063782619010172
- ID: 205588
Cite item
Abstract
Integrated heterostructures exhibiting a nanocolumnar morphology of the InxGa1 –xN film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of spectroscopic methods of analysis, it is shown that the growth of InxGa1 –xN nanocolumns on the por-Si buffer layer offer a number of advantages over growth on the c-Si substrate. Raman and ultraviolet spectroscopy data support the inference about the growth of a nanocolumn structure and agree with the previously obtained X-ray diffraction (XRD) data indicative of the strained, unrelaxed state of the InxGa1 –xN layer. The growth of InxGa1 –xN nanocolumns on the por-Si layer positively influences the optical properties of the heterostructures. At the same half-width of the emission line in the photoluminescence spectrum, the emission intensity for the heterostructure sample grown on the por-Si buffer layer is ~25% higher than the emission intensity for the film grown on the c-Si substrate.
About the authors
P. V. Seredin
Voronezh State University
Author for correspondence.
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
D. L. Goloshchapov
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
D. S. Zolotukhin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
A. S. Lenshin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
A. N. Lukin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
A. M. Mizerov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
E. V. Nikitina
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
I. N. Arsentyev
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
H. Leiste
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344
M. Rinke
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344