InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
- Authors: Nadtochiy A.M.1, Shchukin V.A.2, Cherkashin N.3, Denneulin T.4,3, Zhukov A.E.1, Maximov M.V.1, Gordeev N.Y.5, Payusov A.S.5, Kulagina M.M.5, Shernyakov Y.M.5, Ledentsov N.N.2
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Affiliations:
- St. Petersburg Academic University
- VI Systems GmbH
- CEMES-CNRS
- Peter Grünber Institut (PGI-5)
- Ioffe Institute
- Issue: Vol 53, No 12 (2019)
- Pages: 1699-1704
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/207414
- DOI: https://doi.org/10.1134/S1063782619160218
- ID: 207414
Cite item
Abstract
Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
Keywords
About the authors
A. M. Nadtochiy
St. Petersburg Academic University
Author for correspondence.
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Shchukin
VI Systems GmbH
Email: al.nadtochy@mail.ioffe.ru
Germany, Berlin, 10623
N. Cherkashin
CEMES-CNRS
Email: al.nadtochy@mail.ioffe.ru
France, Cedex 4, Toulouse, 31055
T. Denneulin
Peter Grünber Institut (PGI-5); CEMES-CNRS
Email: al.nadtochy@mail.ioffe.ru
Germany, Jülich, 52425; Cedex 4, Toulouse, 31055
A. E. Zhukov
St. Petersburg Academic University
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. V. Maximov
St. Petersburg Academic University
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. Yu. Gordeev
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. S. Payusov
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. M. Kulagina
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. M. Shernyakov
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. N. Ledentsov
VI Systems GmbH
Email: al.nadtochy@mail.ioffe.ru
Germany, Berlin, 10623