Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

Abstract

The optical reflectance and transmittance spectra of a periodic InGaN/GaN semiconductor heterostructure with 60 quantum wells are studied at room temperature. The period of the structure was chosen such that, at some angles of incidence of light, the energy of a photon resonantly reflected from the Bragg structure coincides with the excitation energy for quantum-well excitons in quantum wells. The parameters of these excitons are determined by fitting the spectra measured at two different angles of incidence, 30° and 60°. We take into account the resonant exciton transitions in quantum wells as well as the transitions into the continuous spectrum. The radiative decay parameter is determined to be (0.20 ± 0.02) meV.