Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices
- Authors: Tarasov A.S.1,2, Ovchinnikov S.G.1,2, Varnakov S.N.1, Yakovlev I.A.1, Smolyarova T.E.1,2, Baron F.A.1, Rautskii M.V.1, Bondarev I.A.1,2, Lukyanenko A.V.1,2, Volkov N.V.1
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Affiliations:
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS
- Institute of Engineering Physics and Radio Electronics, Siberian Federal University
- Issue: Vol 52, No 14 (2018)
- Pages: 1875-1878
- Section: Spin-Related Phenomena in Nanostructures
- URL: https://journals.rcsi.science/1063-7826/article/view/205104
- DOI: https://doi.org/10.1134/S1063782618140312
- ID: 205104
Cite item
Abstract
CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe3Si/Si 3-T structure with 5 μm gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated.
About the authors
A. S. Tarasov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Author for correspondence.
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk
S. G. Ovchinnikov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk
S. N. Varnakov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk
I. A. Yakovlev
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk
T. E. Smolyarova
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk
F. A. Baron
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk
M. V. Rautskii
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk
I. A. Bondarev
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk
A. V. Lukyanenko
Kirensky Institute of Physics, Federal Research Center KSC SB RAS; Institute of Engineering Physics and Radio Electronics, Siberian Federal University
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk; Krasnoyarsk
N. V. Volkov
Kirensky Institute of Physics, Federal Research Center KSC SB RAS
Email: taras@iph.krasn.ru
Russian Federation, Krasnoyarsk