Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure
- Authors: Tyschenko I.E.1, Krivyakin G.K.1, Volodin V.A.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 52, No 2 (2018)
- Pages: 268-272
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202506
- DOI: https://doi.org/10.1134/S1063782618020215
- ID: 202506
Cite item
Abstract
The nucleation of the crystalline Ge phase in SiOxNy films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.
About the authors
I. E. Tyschenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: tys@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
G. K. Krivyakin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: tys@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. A. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: tys@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090