Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
- Authors: Ponomarev D.S.1, Khabibullin R.A.1, Yachmenev A.E.1, Pavlov A.Y.1, Slapovskiy D.N.1, Glinskiy I.A.1,2, Lavrukhin D.V.1, Ruban O.A.1, Maltsev P.P.1
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Affiliations:
- Institute of Ultra-High-Frequency Semiconductor Electronics
- Moscow Technological University (MIREA)
- Issue: Vol 51, No 9 (2017)
- Pages: 1218-1223
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201228
- DOI: https://doi.org/10.1134/S1063782617090160
- ID: 201228
Cite item
Abstract
The results of studies of the electrical and thermal properties of photoconductive antennas for terahertz-radiation generation are reported; these antennas are fabricated on the basis of low-temperaturegrown GaAs (LT-GaAs) and InxGa1 – xAs with an increased content of indium (x > 0.3). It is shown that the power of Joule heating PH due to the effect of “dark” current in InxGa1 – xAs exceeds the same quantity in LT-GaAs by three–five times. This is due to the high intrinsic conductivity of InxGa1 – xAs at x > 0.38. Heatremoval equipment for the photoconductive antenna has been developed and fabricated. The results of numerical simulation show that the use of a heat sink makes it possible to reduce the operating temperature of the antenna based on LT-GaAs by 16%, of the antenna based on In0.38Ga0.62As by 40%, and for antennas based on In0.53Ga0.47As by 64%.
About the authors
D. S. Ponomarev
Institute of Ultra-High-Frequency Semiconductor Electronics
Author for correspondence.
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
R. A. Khabibullin
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
A. E. Yachmenev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
A. Yu. Pavlov
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
D. N. Slapovskiy
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
I. A. Glinskiy
Institute of Ultra-High-Frequency Semiconductor Electronics; Moscow Technological University (MIREA)
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105; Moscow, 119454
D. V. Lavrukhin
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
O. A. Ruban
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105
P. P. Maltsev
Institute of Ultra-High-Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Moscow, 117105