Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures
- Authors: Seredin P.V.1, Leiste H.2, Beltiukov A.N.3, Arsentyev I.N.4, Mizerov A.M.5, Khudyakov Y.Y.1, Lenshin A.S.1, Kondrashin M.A.1, Zolotukhin D.S.1, Goloshchapov D.L.1, Rinke M.2
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Affiliations:
- Voronezh State University
- Karlsruhe Nano Micro Facility
- Physical Technical Institute, Ural Branch, Russian Academy of Sciences
- Ioffe Institute
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Issue: Vol 52, No 13 (2018)
- Pages: 1653-1661
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/204840
- DOI: https://doi.org/10.1134/S106378261813016X
- ID: 204840
Cite item
Abstract
Integrated heterostructures exhibiting nanocolumnar morphology of the InxGa1 – xN/Si(111) film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of structural and microscopic methods of analysis, it is shown that the growth of InxGa1 – xN nanocolumns on a nanoporous buffer layer offers a number of advantages over growth on c-Si. The por-Si substrate predetermines the preferential orientation of the growth of InxGa1 – xN nanocolumns closer to the Si(111) orientation direction and makes it possible to produce InxGa1 – xN nanocolumns with a higher degree of crystallographic uniformity and with a nanocolumn lateral size of ~40 nm unified over the entire surface. The growth of InxGa1 – xN nanocolumns on a por-Si layer yields a decrease in the strain components εxx and εzz and in the density of edge and screw dislocations compared to the corresponding parameters for InxGa1 – xN nanocolumns grown on c-Si. The InxGa1 – xN nanocolumnar layer fabricated on por-Si exhibits a 20% higher charge-carrier concentration compared to the layer grown on c-Si as well as a higher intensity of the photoluminescence quantum yield (+25%).
About the authors
P. V. Seredin
Voronezh State University
Author for correspondence.
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
Harald Leiste
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344
A. N. Beltiukov
Physical Technical Institute, Ural Branch, Russian Academy of Sciences
Email: paul@phys.vsu.ru
Russian Federation, Izhevsk, 426000
I. N. Arsentyev
Ioffe Institute
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
A. M. Mizerov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: paul@phys.vsu.ru
Russian Federation, St. Petersburg, 194021
Yu. Yu. Khudyakov
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
A. S. Lenshin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
M. A. Kondrashin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
D. S. Zolotukhin
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
D. L. Goloshchapov
Voronezh State University
Email: paul@phys.vsu.ru
Russian Federation, Voronezh, 394006
Monika Rinke
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Germany, Eggenstein-Leopoldshafen, 76344