Email this article Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters
- Authors: Lunin L.S.1,2, Lunina M.L.1, Devitsky O.V.3, Sysoev I.A.3
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Affiliations:
- Southern Scientific Center of Russian Academy of Sciences
- Platov South-Russian State Polytechnic University (NPI)
- North-Caucasus Federal University
- Issue: Vol 51, No 3 (2017)
- Pages: 387-391
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199653
- DOI: https://doi.org/10.1134/S1063782617030174
- ID: 199653
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Abstract
Pulsed laser deposition is used to produce AlGaAs and GaP thin films (with a thickness of less than 1 μm) on Si substrates. Methods for reducing the number of structural defects in the films are analyzed, and the effect of strains upon AlGaAs/Si and GaP/Si heterostructures is established by Raman spectroscopy. The application of Al0.3Ga0.7As and GaP films as wide-gap windows of silicon photoelectric converters is examined. The spectral characteristics of photocells based on Al0.3Ga0.7As/Si and GaP/Si heterostructures are studied. The heterostructures can be used as the first p–n junction of a Si-based multijunction photoelectric converter.
About the authors
L. S. Lunin
Southern Scientific Center of Russian Academy of Sciences; Platov South-Russian State Polytechnic University (NPI)
Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, 346428
M. L. Lunina
Southern Scientific Center of Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
O. V. Devitsky
North-Caucasus Federal University
Email: lunin_ls@mail.ru
Russian Federation, Stavropol, 355029
I. A. Sysoev
North-Caucasus Federal University
Email: lunin_ls@mail.ru
Russian Federation, Stavropol, 355029
