Email this article Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC
- Authors: Ivanov P.A.1, Potapov A.S.1, Samsonova T.P.1, Grekhov I.V.1
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Affiliations:
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 7 (2016)
- Pages: 883-887
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197370
- DOI: https://doi.org/10.1134/S106378261607006X
- ID: 197370
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Abstract
The forward current–voltage characteristics of mesa-epitaxial 4H-SiC Schottky diodes are measured in high electric fields (up to 4 × 105 V/cm) in the n-type base region. A semi-empirical formula for the field dependence of the electron drift velocity in 4H-SiC along the hexagonal axis of the crystal is derived. It is shown that the saturated drift velocity is (1.55 ± 0.05) × 107 cm/s in electric fields higher than 2 × 105 V/cm.
About the authors
P. A. Ivanov
Ioffe Physical–Technical Institute
Author for correspondence.
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. S. Potapov
Ioffe Physical–Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
T. P. Samsonova
Ioffe Physical–Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. V. Grekhov
Ioffe Physical–Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
