On the fractal nature of light-emitting structures based on III–N nanomaterials and related phenomena
- Authors: Petrov V.N.1, Sidorov V.G.2, Talnishnikh N.A.3, Chernyakov A.E.3, Shabunina E.I.1, Shmidt N.M.1, Usikov A.S.4, Helava H.4, Makarov Y.N.4,5
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Affiliations:
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Nitride Crystals Inc.
- Nitride Crystals Group
- Issue: Vol 50, No 9 (2016)
- Pages: 1173-1179
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197836
- DOI: https://doi.org/10.1134/S1063782616090207
- ID: 197836
Cite item
Abstract
It is shown that a three-dimensional fractal–percolation system is formed in nanomaterials of light-emitting InGaN/GaN and AlGaN/GaN structures in the presence of conducting extended defects and local inhomogeneities of the composition of the solid solutions; this system determines the electrophysical properties of light-emitting diodes fabricated on the basis of these structures. The geometry and properties of this system depend nonlinearly on the degree of disorder in the nanomaterial of the structures, on the value of the injection current, and on the rate of alloy growth.
About the authors
V. N. Petrov
Ioffe Physical–Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. G. Sidorov
Peter the Great St. Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
N. A. Talnishnikh
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. E. Chernyakov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. I. Shabunina
Ioffe Physical–Technical Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. M. Shmidt
Ioffe Physical–Technical Institute
Author for correspondence.
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. S. Usikov
Nitride Crystals Inc.
Email: Natalia.Shmidt@mail.ioffe.ru
United States, 181 E Industry Ct., NY, 11729
H. Helava
Nitride Crystals Inc.
Email: Natalia.Shmidt@mail.ioffe.ru
United States, 181 E Industry Ct., NY, 11729
Yu. N. Makarov
Nitride Crystals Inc.; Nitride Crystals Group
Email: Natalia.Shmidt@mail.ioffe.ru
United States, 181 E Industry Ct., NY, 11729; St. Petersburg, 194156