Email this article High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency
- Authors: Kyuregyan A.S.1
-
Affiliations:
- Federal State Unitary Enterprise “All-Russian Electrotechnical Institute named after V.I. Lenin”
- Issue: Vol 51, No 9 (2017)
- Pages: 1214-1217
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201213
- DOI: https://doi.org/10.1134/S1063782617090135
- ID: 201213
Cite item
Open Access
Access granted
Subscription Access
Abstract
The energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors, and photothyristors controlled by picosecond laser pulses during the formation of voltage pulses on resistive load RL is studied for the first time. It is shown that at the given values of the resistive load RL, pulse amplitude UR and duration tR, there exist optimum device areas, energies, and absorbances of control radiation providing a maximum total switch efficiency of ~0.92. All three switch types feature almost the same efficiency at short tR; at longer tR, photothyristors have a noticeable advantage.
About the authors
A. S. Kyuregyan
Federal State Unitary Enterprise “All-Russian Electrotechnical Institute named after V.I. Lenin”
Author for correspondence.
Email: semlab@yandex.ru
Russian Federation, ul. Krasnokazarmennaya 12, Moscow, 111250
