Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing
- Authors: Vasev A.V.1, Putyato M.A.1, Preobrazhenskii V.V.1, Bakarov A.K.1, Toropov A.I.1
-
Affiliations:
- Institute of Semiconductor Physics
- Issue: Vol 52, No 5 (2018)
- Pages: 664-666
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203337
- DOI: https://doi.org/10.1134/S1063782618050354
- ID: 203337
Cite item
Abstract
The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 × 5) → (1 × 3) is a complex of two transitions—order → disorder and disorder → order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 × 5) → DO was studied. The activation energies of structural transitions ex(2 × 5) → (2 × 5), (2 × 5) → DO and DO → (1 × 3) on singular and vicinal faces GaSb(001) were determined.
About the authors
A. V. Vasev
Institute of Semiconductor Physics
Author for correspondence.
Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
M. A. Putyato
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. V. Preobrazhenskii
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. K. Bakarov
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. I. Toropov
Institute of Semiconductor Physics
Email: vasev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090