Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range


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Abstract

The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.

About the authors

D. G. Pavelyev

Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: pavelev@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950

A. P. Vasilev

Submicron Heterostructures for Microelectronics, Research and Engineering Center

Email: vmust@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021

V. A. Kozlov

Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures

Email: vmust@beam.ioffe.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087

Yu. I. Koschurinov

Lobachevsky State University of Nizhny Novgorod

Email: vmust@beam.ioffe.ru
Russian Federation, Nizhny Novgorod, 603950

E. S. Obolenskaya

Lobachevsky State University of Nizhny Novgorod

Email: vmust@beam.ioffe.ru
Russian Federation, Nizhny Novgorod, 603950

S. V. Obolensky

Lobachevsky State University of Nizhny Novgorod

Email: vmust@beam.ioffe.ru
Russian Federation, Nizhny Novgorod, 603950

V. M. Ustinov

Ioffe Physical–Technical Institute

Author for correspondence.
Email: vmust@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021


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