Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity

Abstract

The local structure of film samples of the chalcogenide glassy semiconductors Se₉₅As₅ and Se₉₅As₅(EuF₃)_x (x = 0.01–1 at %) are studied by X-ray diffraction and Raman scattering. The “quasiperiod” of the structure, the correlation length, the structural elements, and the chemical bonds, which form the amorphous matrix of the investigated materials, are determined. The obtained results are interpreted within the framework of the Elliott void–cluster model taking into account the chemical activity of europium ions.