Email this article Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
- Authors: Sakharov A.V.1, Kaliteevskii M.A.2, Voznyuk G.V.1,2, Levitskii I.V.1,3, Mitrofanov M.I.1, Tsatsulnikov A.F.3, Lundin W.V.1, Rodin S.N.1, Usov S.O.3, Evtikhiev V.P.1
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Affiliations:
- Ioffe Institute
- ITMO University
- Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
- Issue: Vol 53, No 16 (2019)
- Pages: 2121-2124
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207612
- DOI: https://doi.org/10.1134/S106378261912025X
- ID: 207612
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Abstract
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation defects in the GaN layers that arise in the etching process with a focused Ga+ ion beam (30 keV).
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About the authors
A. V. Sakharov
Ioffe Institute
Author for correspondence.
Email: val@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. A. Kaliteevskii
ITMO University
Author for correspondence.
Email: m.kaliteevskii@mail.ru
Russian Federation, St. Petersburg
G. V. Voznyuk
Ioffe Institute; ITMO University
Author for correspondence.
Email: glebufa0@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg
I. V. Levitskii
Ioffe Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Author for correspondence.
Email: levitskyar@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg
M. I. Mitrofanov
Ioffe Institute
Author for correspondence.
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
A. F. Tsatsulnikov
Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Author for correspondence.
Email: andrew@beam.ioffe.ru
Russian Federation, St. Petersburg
W. V. Lundin
Ioffe Institute
Author for correspondence.
Email: lundin.vpegroup@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. N. Rodin
Ioffe Institute
Author for correspondence.
Email: s_rodin77@mail.ru
Russian Federation, St. Petersburg, 194021
S. O. Usov
Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Author for correspondence.
Email: s.usov@mail.ioffe.ru
Russian Federation, St. Petersburg
V. P. Evtikhiev
Ioffe Institute
Author for correspondence.
Email: Evtikhiev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
