Email this article Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
- Authors: Spirina A.A.1, Neizvestny I.G.1,2, Shwartz N.L.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- Issue: Vol 53, No 16 (2019)
- Pages: 2125-2128
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207614
- DOI: https://doi.org/10.1134/S1063782619120297
- ID: 207614
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Abstract
The initial stages of planar self-catalyzed GaAs nanowire growth via the vapor-liquid-solid mechanism are considered by a kinetic lattice Monte Carlo model. The shapes of the nanocrystals being formed under a catalyzed droplet are presented for three GaAs substrate orientations (111)A, (111)B, (001). The most stable planar GaAs nanowire growth was observed on GaAs(111)A substrates.
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About the authors
A. A. Spirina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: spirina.anna.alex@gmail.com
Russian Federation, Novosibirsk
I. G. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: spirina.anna.alex@gmail.com
Russian Federation, Novosibirsk; Novosibirsk
N. L. Shwartz
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: spirina.anna.alex@gmail.com
Russian Federation, Novosibirsk; Novosibirsk
