电邮这篇文章 Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
- 作者: Spirina A.A.1, Neizvestny I.G.1,2, Shwartz N.L.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- 期: 卷 53, 编号 16 (2019)
- 页面: 2125-2128
- 栏目: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207614
- DOI: https://doi.org/10.1134/S1063782619120297
- ID: 207614
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详细
The initial stages of planar self-catalyzed GaAs nanowire growth via the vapor-liquid-solid mechanism are considered by a kinetic lattice Monte Carlo model. The shapes of the nanocrystals being formed under a catalyzed droplet are presented for three GaAs substrate orientations (111)A, (111)B, (001). The most stable planar GaAs nanowire growth was observed on GaAs(111)A substrates.
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作者简介
A. Spirina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: spirina.anna.alex@gmail.com
俄罗斯联邦, Novosibirsk
I. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: spirina.anna.alex@gmail.com
俄罗斯联邦, Novosibirsk; Novosibirsk
N. Shwartz
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: spirina.anna.alex@gmail.com
俄罗斯联邦, Novosibirsk; Novosibirsk
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