Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
- 作者: Surovegina E.A.1, Demidov E.V.1, Drozdov M.N.1, Murel A.V.1, Khrykin O.I.1, Shashkin V.I.1, Lobaev M.A.2, Gorbachev A.M.2, Viharev A.L.2, Bogdanov S.A.2, Isaev V.A.2, Muchnikov A.B.2, Chernov V.V.2, Radishchev D.B.2, Batler D.E.2
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隶属关系:
- Institute for Physics of Microstructures
- Institute of Applied Physics
- 期: 卷 50, 编号 12 (2016)
- 页面: 1569-1573
- 栏目: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198767
- DOI: https://doi.org/10.1134/S1063782616120204
- ID: 198767
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详细
The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 1017 to ~1020 at cm–3 and of δ doping to the surface concentration (0.3–5) × 1013 at cm–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.
作者简介
E. Surovegina
Institute for Physics of Microstructures
编辑信件的主要联系方式.
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 607680
E. Demidov
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 607680
M. Drozdov
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 607680
A. Murel
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 607680
O. Khrykin
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 607680
V. Shashkin
Institute for Physics of Microstructures
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 607680
M. Lobaev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Gorbachev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Viharev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
S. Bogdanov
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
V. Isaev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Muchnikov
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
V. Chernov
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
D. Radishchev
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
D. Batler
Institute of Applied Physics
Email: suroveginaka@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
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