Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

E. A. Surovegina; E. V. Demidov; M. N. Drozdov; A. V. Murel; O. I. Khrykin; V. I. Shashkin; M. A. Lobaev; A. M. Gorbachev; A. L. Viharev; S. A. Bogdanov; V. A. Isaev; A. B. Muchnikov; V. V. Chernov; D. B. Radishchev; D. E. Batler

doi:10.1134/S1063782616120204

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Authors: Surovegina E.A.¹, Demidov E.V.¹, Drozdov M.N.¹, Murel A.V.¹, Khrykin O.I.¹, Shashkin V.I.¹, Lobaev M.A.², Gorbachev A.M.², Viharev A.L.², Bogdanov S.A.², Isaev V.A.², Muchnikov A.B.², Chernov V.V.², Radishchev D.B.², Batler D.E.²
Affiliations:
1. Institute for Physics of Microstructures
2. Institute of Applied Physics
Issue: Vol 50, No 12 (2016)
Pages: 1569-1573
Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
URL: https://journals.rcsi.science/1063-7826/article/view/198767
DOI: https://doi.org/10.1134/S1063782616120204
ID: 198767

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Statistics

Abstract

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10¹⁷ to ~10²⁰ at cm^–3 and of δ doping to the surface concentration (0.3–5) × 10¹³ at cm^–3 are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.

Username
Password
Remember me

Forgot password?	Register

Username
Password
Remember me

Forgot password?	Register

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Full Text

Abstract

About the authors

This website uses cookies