Study of Deep Levels in a HIT Solar Cell

D. V. Shilina; V. G. Litvinov; A. D. Maslov; V. G. Mishustin; E. I. Terukov; A. S. Titov; S. P. Vikhrov; N. V. Vishnyakov; V. V. Gudzev; A. V. Ermachikhin

doi:10.1134/S1063782618070254

Study of Deep Levels in a HIT Solar Cell

Authors: Shilina D.V.¹, Litvinov V.G.², Maslov A.D.², Mishustin V.G.², Terukov E.I.¹^,3, Titov A.S.¹^,3, Vikhrov S.P.², Vishnyakov N.V.², Gudzev V.V.², Ermachikhin A.V.²
Affiliations:
1. R&D Center of Thin Film Technologies in Energetics under the Ioffe Institute LLC
2. Ryazan State Radio Engineering University
3. Ioffe Institute
Issue: Vol 52, No 7 (2018)
Pages: 926-930
Section: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/203721
DOI: https://doi.org/10.1134/S1063782618070254
ID: 203721

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Abstract

The results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(n⁺)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are studied. The results of comprehensive studies by the above methods are used to determine the features of the energy-band diagram of actual HIT structures.

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Study of Deep Levels in a HIT Solar Cell

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