Email this article The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals
- Authors: Orekhov A.S.1,2, Klechkovskaya V.V.1, Rakova E.V.1, Solomkin F.Y.3, Novikov S.V.3, Bochkov L.V.3, Isachenko G.N.3,4
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Affiliations:
- Shubnikov Institute of Crystallography of Federal Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences
- National Research Centre “Kurchatov Institute”
- Ioffe Institute
- Information Technologies
- Issue: Vol 51, No 7 (2017)
- Pages: 887-890
- Section: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200282
- DOI: https://doi.org/10.1134/S1063782617070302
- ID: 200282
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Abstract
The reason why manganese monosilicide inclusions are formed during the growth of higher manganese silicide (HMS) crystals has not been studied in detail so far. Changes in the amount and density of these inclusions are greatly influenced by dopants. In this study, the structure of HMS crystals with various contents of germanium as a doping element is examined. It is found that raising the germanium content to 1 at % results in the fragmentation of layered manganese monosilicide inclusions and, simultaneously, leads to significant changes in the thermoelectric properties of HMS crystals. The results of the microstructural analysis of HMS crystals in relation to the germanium concentration may be of use for understanding the mechanism by which the manganese monosilicide phase is formed during the growth of higher manganese silicide crystals.
About the authors
A. S. Orekhov
Shubnikov Institute of Crystallography of Federal Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences; National Research Centre “Kurchatov Institute”
Author for correspondence.
Email: andrey.orekhov@gmail.com
Russian Federation, Moscow, 119333; Moscow, 123182
V. V. Klechkovskaya
Shubnikov Institute of Crystallography of Federal Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences
Email: andrey.orekhov@gmail.com
Russian Federation, Moscow, 119333
E. V. Rakova
Shubnikov Institute of Crystallography of Federal Research Centre “Crystallography and Photonics” of the Russian Academy of Sciences
Email: andrey.orekhov@gmail.com
Russian Federation, Moscow, 119333
F. Yu. Solomkin
Ioffe Institute
Email: andrey.orekhov@gmail.com
Russian Federation, St. Petersburg, 194021
S. V. Novikov
Ioffe Institute
Email: andrey.orekhov@gmail.com
Russian Federation, St. Petersburg, 194021
L. V. Bochkov
Ioffe Institute
Email: andrey.orekhov@gmail.com
Russian Federation, St. Petersburg, 194021
G. N. Isachenko
Ioffe Institute; Information Technologies
Email: andrey.orekhov@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
