Email this article Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals
- Authors: Bodnar I.V.1, Chan B.T.1, Pavlovskii V.N.2, Svitsiankou I.E.2, Yablonskii G.P.2
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Affiliations:
- Belarusian State University of Informatics and Radioelectronics
- Institute of Physics, National Academy of Sciences of Belarus
- Issue: Vol 53, No 12 (2019)
- Pages: 1593-1596
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/207357
- DOI: https://doi.org/10.1134/S106378261916005X
- ID: 207357
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Abstract
MnAgIn7S12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap Eg of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap Eg increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.
About the authors
I. V. Bodnar
Belarusian State University of Informatics and Radioelectronics
Author for correspondence.
Email: chemzav@bsuir.by
Belarus, Minsk, 220013
B. T. Chan
Belarusian State University of Informatics and Radioelectronics
Email: chemzav@bsuir.by
Belarus, Minsk, 220013
V. N. Pavlovskii
Institute of Physics, National Academy of Sciences of Belarus
Email: chemzav@bsuir.by
Belarus, Minsk, 220072
I. E. Svitsiankou
Institute of Physics, National Academy of Sciences of Belarus
Email: chemzav@bsuir.by
Belarus, Minsk, 220072
G. P. Yablonskii
Institute of Physics, National Academy of Sciences of Belarus
Email: chemzav@bsuir.by
Belarus, Minsk, 220072
