Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon
- Authors: Kryuchenko Y.V.1, Kostylyov V.P.1, Sokolovskyi I.O.1, Abramov A.S.2, Bobyl A.V.3, Panaiotti I.E.3, Terukov E.I.2,3, Sachenko A.V.1
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Affiliations:
- Lashkaryov Institute of Semiconductor Physics
- Research and Development Center for Thin-Film Technologies in Energetics
- Ioffe Physical–Technical Institute
- Issue: Vol 50, No 2 (2016)
- Pages: 257-260
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196824
- DOI: https://doi.org/10.1134/S1063782616020226
- ID: 196824
Cite item
Abstract
An approach is proposed to calculate the optimal parameters of silicon-based heterojunction solar cells whose key feature is a low rate of recombination processes in comparison with direct-gap semiconductors. It is shown that at relatively low majority-carrier concentrations (Nd ∼ 1015 cm–3), the excess carrier concentration can be comparable to or higher than Nd. In this case, the efficiency η is independent of Nd. At higher Nd, the dependence η(Nd) is defined by two opposite trends. One of them promotes an increase in η with Nd, and the other associated with Auger recombination leads to a decrease in η. The optimum value Nd ≈ 2 × 1016 cm–3 at which η of such a cell is maximum is determined. It is shown that maximum η is 1.5–2% higher than η at 1015 cm–3.
About the authors
Yu. V. Kryuchenko
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
V. P. Kostylyov
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
I. O. Sokolovskyi
Lashkaryov Institute of Semiconductor Physics
Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028
A. S. Abramov
Research and Development Center for Thin-Film Technologies in Energetics
Email: sach@isp.kiev.ua
Russian Federation, ul. Politekhnicheskaya 28, St. Petersburg, 194021
A. V. Bobyl
Ioffe Physical–Technical Institute
Email: sach@isp.kiev.ua
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
I. E. Panaiotti
Ioffe Physical–Technical Institute
Email: sach@isp.kiev.ua
Russian Federation, ul. Politekhnicheskaya 26, St. Petersburg, 194021
E. I. Terukov
Research and Development Center for Thin-Film Technologies in Energetics; Ioffe Physical–Technical Institute
Email: sach@isp.kiev.ua
Russian Federation, ul. Politekhnicheskaya 28, St. Petersburg, 194021; ul. Politekhnicheskaya 26, St. Petersburg, 194021
A. V. Sachenko
Lashkaryov Institute of Semiconductor Physics
Author for correspondence.
Email: sach@isp.kiev.ua
Ukraine, pr. Nauki 41, Kyiv, 03028