Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations
- Authors: Semenov A.N.1, Nechaev D.V.1, Troshkov S.I.1, Nashchekin A.V.1, Brunkov P.N.1, Jmerik V.N.1, Ivanov S.V.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 52, No 13 (2018)
- Pages: 1770-1774
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204952
- DOI: https://doi.org/10.1134/S1063782618130158
- ID: 204952
Cite item
Abstract
The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated.
About the authors
A. N. Semenov
Ioffe Institute
Author for correspondence.
Email: semenov@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. V. Nechaev
Ioffe Institute
Email: semenov@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. I. Troshkov
Ioffe Institute
Email: semenov@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Nashchekin
Ioffe Institute
Email: semenov@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. N. Brunkov
Ioffe Institute
Email: semenov@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. Jmerik
Ioffe Institute
Email: semenov@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Ivanov
Ioffe Institute
Email: semenov@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021