Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates
- Authors: Maximov M.V.1, Nadtochiy A.M.1, Shernyakov Y.M.2, Payusov A.S.2, Vasil’ev A.P.3, Ustinov V.M.3,4, Serin A.A.2, Gordeev N.Y.2, Zhukov A.E.1
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Affiliations:
- St. Petersburg Academic University
- Ioffe Institute
- Submicron Heterostructures for Mircoelectronics, Research & Engineering Center, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- Issue: Vol 52, No 10 (2018)
- Pages: 1311-1316
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204170
- DOI: https://doi.org/10.1134/S1063782618100093
- ID: 204170
Cite item
Abstract
The characteristics of lasers of the 1.44–1.46-μm optical range grown on GaAs substrates using a metamorphic buffer are studied. The active region of the laser contains 10 rows of InAs/In0.4Ga0.6As/In0.2Ga0.8As quantum dots. It is shown that the use of special selective high-temperature annealing along with the application of short-period In0.2Ga0.8As/In0.2Al0.3Ga0.5As short-period superlattices makes it possible to substantially decrease the density of threading dislocations in the active region. A threshold current density of 1300 A cm–2, external differential quantum efficiency of 38%, and maximal pulsed-mode output power of 13 W are attained for a laser with a broad area 3 mm in length.
About the authors
M. V. Maximov
St. Petersburg Academic University
Author for correspondence.
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. M. Nadtochiy
St. Petersburg Academic University
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
Yu. M. Shernyakov
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. S. Payusov
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. P. Vasil’ev
Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,Russian Academy of Sciences
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
V. M. Ustinov
Submicron Heterostructures for Mircoelectronics, Research & Engineering Center,Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
A. A. Serin
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
N. Yu. Gordeev
Ioffe Institute
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. E. Zhukov
St. Petersburg Academic University
Email: maximov@beam.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021