Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types
- Authors: Kukushkin S.A.1,2,3, Osipov A.V.1,2, Red’kov A.V.1,3
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Affiliations:
- Institute of Problems of Mechanical Engineering
- National Research University of Information Technologies, Mechanics and Optics
- Peter the Great Saint-Petersburg Polytechnic University
- Issue: Vol 51, No 3 (2017)
- Pages: 396-401
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199661
- DOI: https://doi.org/10.1134/S1063782617030149
- ID: 199661
Cite item
Abstract
A chemical-etching based method for separating GaN/AlN and AlN epitaxial heterostructures grown on silicon with a silicon-carbide buffer layer and transferring them to substrates of any type is developed. GaN/AlN/SiC and AlN/SiC heterostructures 2.5 μm and 18 μm thick, respectively, are separated and transferred to a glass substrate. It is shown that a silicon-carbide buffer layer on silicon, grown by the substitution method, has a developed subsurface structure which allows easy separation of the film from the substrate and promotes the relaxation of elastic energy caused by a difference in thermal-expansion coefficients of the film and substrate. It is shown that mechanical stresses in the film after its separation from the silicon substrate almost completely relaxed.
About the authors
S. A. Kukushkin
Institute of Problems of Mechanical Engineering; National Research University of Information Technologies, Mechanics and Optics; Peter the Great Saint-Petersburg Polytechnic University
Email: avredkov@gmail.com
Russian Federation, Bolshoi pr. 61, St. Petersburg, 199178; pr. Kronverkskii 49, St. Petersburg, 197101; Politekhnicheskaya ul. 29, St. Petersburg, 195251
A. V. Osipov
Institute of Problems of Mechanical Engineering; National Research University of Information Technologies, Mechanics and Optics
Email: avredkov@gmail.com
Russian Federation, Bolshoi pr. 61, St. Petersburg, 199178; pr. Kronverkskii 49, St. Petersburg, 197101
A. V. Red’kov
Institute of Problems of Mechanical Engineering; Peter the Great Saint-Petersburg Polytechnic University
Author for correspondence.
Email: avredkov@gmail.com
Russian Federation, Bolshoi pr. 61, St. Petersburg, 199178; Politekhnicheskaya ul. 29, St. Petersburg, 195251