Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
- Authors: Malin T.V.1, Milakhin D.S.1, Mansurov V.G.1, Galitsyn Y.G.1, Kozhuhov A.S.1, Ratnikov V.V.2, Smirnov A.N.2, Davydov V.Y.2, Zhuravlev K.S.1,3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics
- Ioffe Institute
- Novosibirsk State University
- Issue: Vol 52, No 6 (2018)
- Pages: 789-796
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/203547
- DOI: https://doi.org/10.1134/S1063782618060143
- ID: 203547
Cite item
Abstract
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.
About the authors
T. V. Malin
Rzhanov Institute of Semiconductor Physics
Author for correspondence.
Email: mal-tv@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
D. S. Milakhin
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. G. Mansurov
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
Yu. G. Galitsyn
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. S. Kozhuhov
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. V. Ratnikov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
Russian Federation, St. Petersburg, 194021
A. N. Smirnov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
Russian Federation, St. Petersburg, 194021
V. Yu. Davydov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
Russian Federation, St. Petersburg, 194021
K. S. Zhuravlev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: mal-tv@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090