Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors


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Ашық рұқсат Ашық рұқсат
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Аннотация

On the basis of a Pb1 –xSnxSe solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb1 –xSnxSe single crystals are grown from the vapor phase under the conditions of free growth (unseeded vapor-growth technique). By the example of a HgCdTe narrow-gap semiconductor and a quantum-well heterostructure, the possibility of applying the developed lasers in solid-state spectroscopy is demonstrated.

Авторлар туралы

K. Maremyanin

Institute for Physics of Microstructures, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: kirillm@ipmras.ru
Ресей, Nizhny Novgorod, 603950

A. Ikonnikov

Faculty of Physics, Moscow State University

Email: kirillm@ipmras.ru
Ресей, Moscow, 119991

L. Bovkun

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: kirillm@ipmras.ru
Ресей, Nizhny Novgorod, 603950

V. Rumyantsev

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: kirillm@ipmras.ru
Ресей, Nizhny Novgorod, 603950

E. Chizhevskii

Lebedev Physical Institute, Russian Academy of Sciences

Email: kirillm@ipmras.ru
Ресей, Moscow, 119991

I. Zasavitskii

Lebedev Physical Institute, Russian Academy of Sciences

Email: kirillm@ipmras.ru
Ресей, Moscow, 119991

V. Gavrilenko

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: kirillm@ipmras.ru
Ресей, Nizhny Novgorod, 603950

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