Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
- Authors: Lipkova E.A.1, Efimova A.I.1, Gonchar K.A.1, Presnov D.E.1,2, Eliseev A.A.3, Lapshin A.N.4, Timoshenko V.Y.1,5,6
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Affiliations:
- Moscow State University, Faculty of Physics
- Moscow State University, D.V. Skobeltsyn Institute of Nuclear Physics
- Moscow State University, Faculty of Materials Science
- Bruker Ltd
- National Research Nuclear University “MEPhI”
- Lebedev Physical Institute, Russian Academy of Sciences
- Issue: Vol 53, No 11 (2019)
- Pages: 1524-1528
- Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/207318
- DOI: https://doi.org/10.1134/S1063782619110113
- ID: 207318
Cite item
Abstract
Attenuated total reflection infrared spectroscopy is used to determine the free charge carrier concentration in arrays of silicon nanowires with characteristic transverse sizes of 50–100 nm and a length of the order of 10 μm formed on lightly doped crystalline p-type silicon by metal-assisted chemical etching and subjected to the additional thermal-diffusion doping of boron at temperatures of 850–1000°C. It is found that the free hole concentration in arrays varies from 5 × 1018 to 3 × 1019 cm–3 depending on the annealing temperature and is maximal at temperatures of 900–950°C. These results can be used to extend the range of potential application of silicon nanowires in photonics, sensorics, and thermoelectric power converters.
About the authors
E. A. Lipkova
Moscow State University, Faculty of Physics
Email: efimova@vega.phys.msu.ru
Russian Federation, Moscow, 119991
A. I. Efimova
Moscow State University, Faculty of Physics
Author for correspondence.
Email: efimova@vega.phys.msu.ru
Russian Federation, Moscow, 119991
K. A. Gonchar
Moscow State University, Faculty of Physics
Email: efimova@vega.phys.msu.ru
Russian Federation, Moscow, 119991
D. E. Presnov
Moscow State University, Faculty of Physics; Moscow State University, D.V. Skobeltsyn Institute of Nuclear Physics
Email: efimova@vega.phys.msu.ru
Russian Federation, Moscow, 119991; Moscow, 119234
A. A. Eliseev
Moscow State University, Faculty of Materials Science
Email: efimova@vega.phys.msu.ru
Russian Federation, Moscow, 119991
A. N. Lapshin
Bruker Ltd
Email: efimova@vega.phys.msu.ru
Russian Federation, Moscow, 119017
V. Yu. Timoshenko
Moscow State University, Faculty of Physics; National Research Nuclear University “MEPhI”; Lebedev Physical Institute, Russian Academy of Sciences
Email: efimova@vega.phys.msu.ru
Russian Federation, Moscow, 119991; Moscow, 115409; Moscow, 119991