Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn
- Authors: Kalentyeva I.L.1, Vikhrova O.V.1, Danilov Y.A.1, Zvonkov B.N.1, Kudrin A.V.1, Drozdov M.N.2
-
Affiliations:
- Physical–Technical Research Institute
- Institute for Physics of Microstructures
- Issue: Vol 50, No 11 (2016)
- Pages: 1469-1474
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198344
- DOI: https://doi.org/10.1134/S1063782616110129
- ID: 198344
Cite item
Abstract
The effects of isochronal thermal annealing (at 325–725°C) on the radiative properties of InGaAs/GaAs nanoheterostructures containing a low-temperature GaAs layer δ-doped with Mn grown by laser deposition are studied. A decrease in the photoluminescence intensity and increase in the ground transition energy are observed upon thermal impact for quantum wells located near the low-temperature GaAs layer. The distribution of Mn atoms in the initial and annealed structures is obtained by secondary-ion mass spectrometry. A qualitative model of the observed effects of thermal annealing on the radiative properties of the structures is discussed; this model takes into account two main processes: diffusion of point defects (primarily gallium vacancies) from the GaAs coating layer deep into the structure and Mn diffusion in both directions by the dissociation mechanism. Magnetization studies show that, as a result of thermal annealing, an increase in the proportion of the ferromagnetic phase at room temperature (presumably, MnAs clusters) in the low-temperature GaAs coating layer takes place.
About the authors
I. L. Kalentyeva
Physical–Technical Research Institute
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
O. V. Vikhrova
Physical–Technical Research Institute
Author for correspondence.
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
Yu. A. Danilov
Physical–Technical Research Institute
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
B. N. Zvonkov
Physical–Technical Research Institute
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Kudrin
Physical–Technical Research Institute
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950
M. N. Drozdov
Institute for Physics of Microstructures
Email: istery@rambler.ru
Russian Federation, Nizhny Novgorod, 603950