Structure and Thermoelectric Properties of CoSi-Based Film Composites
- Authors: Kuznetsova V.S.1, Novikov S.V.1, Nichenametla C.K.2, Calvo J.2, Wagner-Reetz M.2
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Affiliations:
- Ioffe Institute
- Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
- Issue: Vol 53, No 6 (2019)
- Pages: 775-779
- Section: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/206302
- DOI: https://doi.org/10.1134/S1063782619060101
- ID: 206302
Cite item
Abstract
The properties of Co–Si thin films grown by the thermal sintering of Co and Si layers are studied. Co and Si layers are produced by chemical vapor deposition. To form cobalt silicide, the obtained two-layer structure is annealed at a temperature of 760 K for 12 h. The thermoelectric properties of the film structure are studied in the temperature range of 300–800 K. The temperature dependences of the thermoelectric power and resistivity, as well as structural data, indicate the formation of a multilayer structure containing layers with excess silicon and cobalt.
About the authors
V. S. Kuznetsova
Ioffe Institute
Author for correspondence.
Email: v.kuznetsova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. V. Novikov
Ioffe Institute
Email: v.kuznetsova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
C. K. Nichenametla
Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
Email: v.kuznetsova@mail.ioffe.ru
Germany, Dresden
J. Calvo
Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
Email: v.kuznetsova@mail.ioffe.ru
Germany, Dresden
M. Wagner-Reetz
Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
Email: v.kuznetsova@mail.ioffe.ru
Germany, Dresden