On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region
- Authors: Inglizian P.N.1, Mikheyev V.K.1, Novinkov V.V.1, Shchedrov E.R.1
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Affiliations:
- LLC “ERA–SPhTI”
- Issue: Vol 50, No 4 (2016)
- Pages: 447-448
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196959
- DOI: https://doi.org/10.1134/S1063782616040126
- ID: 196959
Cite item
Abstract
For n- and p-type Si0.85Ge0.15 alloys, the thermoelectric properties (thermopower, resistivity, thermal conductivity, and thermoelectric efficiency) are determined in the range from room temperature to 1200°C. The measurements are carried out with an upgraded device [1] by absolute and steady-state methods with thermal screens. The device is upgraded to extend the working-temperature range to ~1500 K. On the basis of these data, the energy-related capabilities of the alloy are estimated; the thermal band-gap width is calculated in the temperature range of ~1300–1400 K.
About the authors
P. N. Inglizian
LLC “ERA–SPhTI”
Author for correspondence.
Email: sfti-era@mail.ru
Georgia, Sukhum, Abkhazia, 354000
V. K. Mikheyev
LLC “ERA–SPhTI”
Email: sfti-era@mail.ru
Georgia, Sukhum, Abkhazia, 354000
V. V. Novinkov
LLC “ERA–SPhTI”
Email: sfti-era@mail.ru
Georgia, Sukhum, Abkhazia, 354000
E. R. Shchedrov
LLC “ERA–SPhTI”
Email: sfti-era@mail.ru
Georgia, Sukhum, Abkhazia, 354000