MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3

Abstract

The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substrate temperature for growth of GaN and AlGaN layers was determined analyzing thermal decomposition rate of GaN. Based on the information, high electron mobility transistor heterostructures were grown on sapphire substrates using both ammonia and combined plasma-assisted/ammonia MBE modes. The highest achieved 2DEG mobility was 1992 cm²/(V s) (at 2DEG density of 1.17 × 10¹³ cm^–2) which is the current state-of-the-art level.