Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation
- Authors: Puzanov A.S.1, Obolenskiy S.V.1, Kozlov V.A.1,2
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Issue: Vol 52, No 11 (2018)
- Pages: 1407-1411
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204295
- DOI: https://doi.org/10.1134/S1063782618110209
- ID: 204295
Cite item
Abstract
The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.
About the authors
A. S. Puzanov
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: aspuzanov@inbox.ru
Russian Federation, Nizhny Novgorod, 603600
S. V. Obolenskiy
Lobachevsky State University of Nizhny Novgorod
Email: aspuzanov@inbox.ru
Russian Federation, Nizhny Novgorod, 603600
V. A. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: aspuzanov@inbox.ru
Russian Federation, Nizhny Novgorod, 603600; Nizhny Novgorod, 607680