Email this article FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy
- Authors: Mitrofanov M.I.1, Levitskii I.V.1, Voznyuk G.V.2, Tatarinov E.E.2, Rodin S.N.1, Lundin W.V.1, Evtikhiev V.P.1, Mizerov M.3
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Affiliations:
- Ioffe Institute
- ITMO University
- SHM RE Center, RAS
- Issue: Vol 52, No 16 (2018)
- Pages: 2114-2116
- Section: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://journals.rcsi.science/1063-7826/article/view/205426
- DOI: https://doi.org/10.1134/S1063782618160212
- ID: 205426
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About the authors
M. I. Mitrofanov
Ioffe Institute
Author for correspondence.
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
I. V. Levitskii
Ioffe Institute
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
G. V. Voznyuk
ITMO University
Email: maxi.mitrofanov@gmail.com
Russian Federation, Saint Petersburg, 197101
E. E. Tatarinov
ITMO University
Email: maxi.mitrofanov@gmail.com
Russian Federation, Saint Petersburg, 197101
S. N. Rodin
Ioffe Institute
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
W. V. Lundin
Ioffe Institute
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
V. P. Evtikhiev
Ioffe Institute
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg, 194021
M.N. Mizerov
SHM RE Center, RAS
Email: maxi.mitrofanov@gmail.com
Russian Federation, St. Petersburg
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