Email this article Dielectric Relaxation in Thin Layers of the Ge28.5Pb15S56.5 Glassy System
- Authors: Castro R.A.1, Anisimova N.I.1, Kononov A.A.1
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Affiliations:
- Alexander Herzen State Pedagogical University of Russia
- Issue: Vol 52, No 8 (2018)
- Pages: 1043-1046
- Section: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203879
- DOI: https://doi.org/10.1134/S1063782618080092
- ID: 203879
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Abstract
The results of studying dielectric relaxation processes in the Ge28.5Pb15S56.5 glassy system are presented. The existence of the non-Debye relaxation process caused by the distribution of relaxors over the relaxation time according to the Cole–Cole model is revealed. The energy and structural parameters are calculated: the activation energy Ep = 0.40 eV and the molecular dipole moment μ = 1.08 D. The detected features are explained within the model according to which the chalcogenide-glass structure is a set of dipoles formed by charged defects such as D+ and D–.
About the authors
R. A. Castro
Alexander Herzen State Pedagogical University of Russia
Author for correspondence.
Email: recastro@mail.ru
Russian Federation, St. Petersburg, 191186
N. I. Anisimova
Alexander Herzen State Pedagogical University of Russia
Email: recastro@mail.ru
Russian Federation, St. Petersburg, 191186
A. A. Kononov
Alexander Herzen State Pedagogical University of Russia
Email: recastro@mail.ru
Russian Federation, St. Petersburg, 191186
