Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation
- Authors: Yakovlev S.A.1, Ankudinov A.V.1,2, Vorobyov Y.V.3, Voronov M.M.1, Kozyukhin S.A.4, Melekh B.T.1, Pevtsov A.B.1
-
Affiliations:
- Ioffe Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- Ryazan State Radio Engineering University
- Kurnakov Institute of General and Inorganic Chemistry
- Issue: Vol 52, No 6 (2018)
- Pages: 809-815
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/203566
- DOI: https://doi.org/10.1134/S1063782618060246
- ID: 203566
Cite item
Abstract
Submicron periodic lattices are formed at the surface of phase-change-memory film materials based on the complex chalcogenide Ge2Sb2Te5 when exposed to nanosecond laser pulses. The geometric characteristics and structural properties of laser-induced lattices are studied by optical and atomic-force microscopies and Raman spectroscopy. It is shown that, at appropriately chosen parameters of exposure to laser radiation, it is possible to implement periodic modulation of the refractive index in the structures formed. Modulation is due to the postexposure solidification of grating ridges and valleys in different phase states, whose dielectric constants widely differ from each other. In the vicinity of the maxima of the wavy structure, the amorphous state is mainly formed, whereas in the region of minima, the Ge2Sb2Te5 structure corresponds mainly to the crystalline phase.
About the authors
S. A. Yakovlev
Ioffe Institute
Email: pevtsov@gvg.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Ankudinov
Ioffe Institute; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: pevtsov@gvg.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
Yu. V. Vorobyov
Ryazan State Radio Engineering University
Email: pevtsov@gvg.ioffe.ru
Russian Federation, Ryazan, 390005
M. M. Voronov
Ioffe Institute
Email: pevtsov@gvg.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. A. Kozyukhin
Kurnakov Institute of General and Inorganic Chemistry
Email: pevtsov@gvg.ioffe.ru
Russian Federation, Moscow, 119991
B. T. Melekh
Ioffe Institute
Email: pevtsov@gvg.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. B. Pevtsov
Ioffe Institute
Author for correspondence.
Email: pevtsov@gvg.ioffe.ru
Russian Federation, St. Petersburg, 194021