Charge Accumulation in MOS Structures with a Polysilicon Gate under Tunnel Injection
- Authors: Aleksandrov O.V.1, Ageev A.N.1, Zolotarev S.I.1
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Affiliations:
- St. Petersburg State Electrotechnical University “LETI”
- Issue: Vol 52, No 13 (2018)
- Pages: 1732-1737
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204901
- DOI: https://doi.org/10.1134/S1063782618130031
- ID: 204901
Cite item
Abstract
Charge accumulation in metal—oxide—semiconductor (MOS) structures with a doped and undoped polysilicon gate with Al contacts and without them under tunnel electron injection from the gate and silicon substrate is investigated. It is shown that negative charge is accumulated near the polysilicon gate irrespective of the injection polarity, and positive charge is accumulated near the silicon substrate. Negative charge also appears near the silicon substrate at large injection charges. The results are described with the help of a numerical model, in which the formation of electron traps with the deposition of Al contacts and the generation of electron traps during the recombination of free electrons with holes captured at traps is taken into account.
About the authors
O. V. Aleksandrov
St. Petersburg State Electrotechnical University “LETI”
Author for correspondence.
Email: Aleksandr_ov@mail.ru
Russian Federation, St. Petersburg, 197376
A. N. Ageev
St. Petersburg State Electrotechnical University “LETI”
Email: Aleksandr_ov@mail.ru
Russian Federation, St. Petersburg, 197376
S. I. Zolotarev
St. Petersburg State Electrotechnical University “LETI”
Email: Aleksandr_ov@mail.ru
Russian Federation, St. Petersburg, 197376