Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures
- Authors: Grebenshchikova E.A.1, Salikhov K.M.2, Sidorov V.G.3, Shutaev V.A.1, Yakovlev Y.P.1
-
Affiliations:
- Ioffe Institute
- Institute of Applied Research, Tatarstan Academy of Sciences
- IBSG Co., Ltd.
- Issue: Vol 52, No 10 (2018)
- Pages: 1303-1306
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204157
- DOI: https://doi.org/10.1134/S1063782618100044
- ID: 204157
Cite item
Abstract
The photovoltage of a metal–insulator–semiconductor structure (Pd–anodic oxide–InP) is studied in relation to the hydrogen concentration in the range 0.1–100 vol % in a nitrogen–hydrogen gas mixture. It is shown that, under simultaneous exposure of the structure to light and hydrogen, the photovoltage decay rate and the hydrogen concentration are exponentially related to each other: NH = aexp(bS). Here, NH is the hydrogen concentration (vol %) in the nitrogen–hydrogen mixture. S = dU/dt|t = 0 is the rate at which the signal U changes in the initial portion of the photovoltage decay, beginning from the instant at which the structure is brought into contact with the gas mixture. a and b are constants dependent on the thicknesses of the palladium layer and anodic oxide film on InP.
About the authors
E. A. Grebenshchikova
Ioffe Institute
Author for correspondence.
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Kh. M. Salikhov
Institute of Applied Research, Tatarstan Academy of Sciences
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, Kazan, Tatarstan, 420111
V. G. Sidorov
IBSG Co., Ltd.
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Shutaev
Ioffe Institute
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. P. Yakovlev
Ioffe Institute
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021