Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth
- Autores: Romanov V.V.1, Dement’ev P.A.1, Moiseev K.D.1
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Afiliações:
- Ioffe Physical–Technical Institute
- Edição: Volume 50, Nº 7 (2016)
- Páginas: 910-914
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197409
- DOI: https://doi.org/10.1134/S1063782616070216
- ID: 197409
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Resumo
Indium-antimonide quantum dots (7–9 × 109 cm2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.
Sobre autores
V. Romanov
Ioffe Physical–Technical Institute
Email: mkd@iropt2.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
P. Dement’ev
Ioffe Physical–Technical Institute
Email: mkd@iropt2.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
K. Moiseev
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: mkd@iropt2.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
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