Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth


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Resumo

Indium-antimonide quantum dots (7–9 × 109 cm2) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of T = 440°C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

Sobre autores

V. Romanov

Ioffe Physical–Technical Institute

Email: mkd@iropt2.ioffe.rssi.ru
Rússia, St. Petersburg, 194021

P. Dement’ev

Ioffe Physical–Technical Institute

Email: mkd@iropt2.ioffe.rssi.ru
Rússia, St. Petersburg, 194021

K. Moiseev

Ioffe Physical–Technical Institute

Autor responsável pela correspondência
Email: mkd@iropt2.ioffe.rssi.ru
Rússia, St. Petersburg, 194021

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