AlN/GaN heterostructures for normally-off transistors

K. S. Zhuravlev; T. V. Malin; V. G. Mansurov; O. E. Tereshenko; K. K. Abgaryan; D. L. Reviznikov; V. E. Zemlyakov; V. I. Egorkin; Ya. M. Parnes; V. G. Tikhomirov; I. P. Prosvirin

doi:10.1134/S1063782617030277

AlN/GaN heterostructures for normally-off transistors

Authors: Zhuravlev K.S.¹^,2, Malin T.V.¹, Mansurov V.G.¹, Tereshenko O.E.¹^,2, Abgaryan K.K.³, Reviznikov D.L.³, Zemlyakov V.E.⁴, Egorkin V.I.⁴, Parnes Y.M.⁵, Tikhomirov V.G.⁵, Prosvirin I.P.⁶
Affiliations:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
2. Novosibirsk State University
3. Dorodnicyn Computing Centre of the Russian Academy of Sciences
4. National Research University of Electronic Technology (MIET)
5. Joint Stock Company “Svetlana-Electronpribor”
6. Boreskov Institute of Catalysis, Siberian Branch
Issue: Vol 51, No 3 (2017)
Pages: 379-386
Section: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/199646
DOI: https://doi.org/10.1134/S1063782617030277
ID: 199646

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Abstract

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

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AlN/GaN heterostructures for normally-off transistors

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Abstract

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