Contactless characterization of manganese and carbon delta-layers in gallium arsenide
- Authors: Komkov O.S.1, Kudrin A.V.2
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Affiliations:
- St. Petersburg Electrotechnical University “LETI”
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 51, No 11 (2017)
- Pages: 1420-1426
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201492
- DOI: https://doi.org/10.1134/S1063782617110161
- ID: 201492
Cite item
Abstract
Single manganese and carbon δ-layers in undoped GaAs are analyzed by photoreflectance spectroscopy. The strength of built-in electric fields, determined by this method, is shown to increase with increasing layer concentration of introduced impurities and well correlate with technological and Hall data. The use of phase-sensitive photoreflectance makes it possible to measure the surface field and the field induced by δ-doping separately. This fact allows one to determine without contact the fraction of electrically active Mn impurity and reveal the contribution of carbon δ-layers to the characteristics of GaAs-based heterostructures.
About the authors
O. S. Komkov
St. Petersburg Electrotechnical University “LETI”
Author for correspondence.
Email: okomkov@yahoo.com
Russian Federation, St. Petersburg, 197376
A. V. Kudrin
Lobachevsky State University of Nizhny Novgorod
Email: okomkov@yahoo.com
Russian Federation, Nizhny Novgorod, 603950