Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods
- Authors: Astankova K.N.1, Gorokhov E.B.1, Azarov I.A.1,2, Volodin V.A.1,2, Latyshev A.V.1,2
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Affiliations:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Issue: Vol 53, No 16 (2019)
- Pages: 2064-2067
- Section: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207585
- DOI: https://doi.org/10.1134/S1063782619120030
- ID: 207585
Cite item
Abstract
Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO2{Ge-NCs} heterolayers. When removal the GeO2 matrix from a thick GeO2{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.
About the authors
K. N. Astankova
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: as-tankoff@ya.ru
Russian Federation, Novosibirsk, 630090
E. B. Gorokhov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: latyshev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. A. Azarov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: azarov_ivan@mail.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. A. Volodin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: volodin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
A. V. Latyshev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Author for correspondence.
Email: latyshev@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090